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dc.contributor.authorLOONG, WAen_US
dc.contributor.authorCHANG, HWen_US
dc.date.accessioned2014-12-08T15:05:18Z-
dc.date.available2014-12-08T15:05:18Z-
dc.date.issued1991-03-14en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/11536/3837-
dc.description.abstractThe resistance of poly(butene-1 sulfone) (PBS) to CF4 and oxygen reactive ion etching is greatly enhanced by low power nitrogen plasma pretreatment. The original thickness of PBS can be maintained.en_US
dc.language.isoen_USen_US
dc.subjectPLASMASen_US
dc.subjectPHOTOLITHOGRAPHYen_US
dc.subjectSEMICONDUCTOR DOPINGen_US
dc.subjectSEMICONDUCTOR GROWTHen_US
dc.titleENHANCEMENT OF CF4 AND O2 REACTIVE ION ETCHING RESISTANCE OF POLY(BUTENE-1 SULFONE) BY N2 PLASMA PRETREATMENTen_US
dc.typeArticleen_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume27en_US
dc.citation.issue6en_US
dc.citation.spage541en_US
dc.citation.epage542en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:A1991FD31200038-
dc.citation.woscount2-
Appears in Collections:Articles


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