ENHANCEMENT OF CF4 AND O2 REACTIVE ION ETCHING RESISTANCE OF POLY(BUTENE-1 SULFONE) BY N2 PLASMA PRETREATMENT

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LOONG, WA	en_US
dc.contributor.author	CHANG, HW	en_US
dc.date.accessioned	2014-12-08T15:05:18Z	-
dc.date.available	2014-12-08T15:05:18Z	-
dc.date.issued	1991-03-14	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3837	-
dc.description.abstract	The resistance of poly(butene-1 sulfone) (PBS) to CF4 and oxygen reactive ion etching is greatly enhanced by low power nitrogen plasma pretreatment. The original thickness of PBS can be maintained.	en_US
dc.language.iso	en_US	en_US
dc.subject	PLASMAS	en_US
dc.subject	PHOTOLITHOGRAPHY	en_US
dc.subject	SEMICONDUCTOR DOPING	en_US
dc.subject	SEMICONDUCTOR GROWTH	en_US
dc.title	ENHANCEMENT OF CF4 AND O2 REACTIVE ION ETCHING RESISTANCE OF POLY(BUTENE-1 SULFONE) BY N2 PLASMA PRETREATMENT	en_US
dc.type	Article	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	27	en_US
dc.citation.issue	6	en_US
dc.citation.spage	541	en_US
dc.citation.epage	542	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Applied Chemistry	en_US
dc.identifier.wosnumber	WOS:A1991FD31200038	-
dc.citation.woscount	2	-
顯示於類別：	期刊論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。