ENHANCED OXYGEN PLASMA STRIPPING OF P+-IMPLANTED NEGATIVE RESIST BY HYDROGEN PLASMA PRETREATMENT - TEMPERATURE EFFECTS

標題:	ENHANCED OXYGEN PLASMA STRIPPING OF P+-IMPLANTED NEGATIVE RESIST BY HYDROGEN PLASMA PRETREATMENT - TEMPERATURE EFFECTS
作者:	LOONG, WA YEN, MS 交大名義發表應用化學系 National Chiao Tung University Department of Applied Chemistry
關鍵字:	ION IMPLANTATION;PLASMAS
公開日期:	6-六月-1991
摘要:	Hydrogen plasma pretreatment (90-115-degrees-C, 10-30 min) of P+-implanted (100 keV, 1 x 10(15) ion/cm2) HR-200 negative resist greatly reduces its resistance to oxygen plasma stripping at about 40-degrees-C. At lower temperature for hydrogen plasma pretreatment (down to 40-degrees-C) and higher temperature for oxygen plasma stripping (up to 115-degrees-C), the reduction to resistance of oxygen plasma stripping by hydrogen plasma pretreatment is much smaller.
URI:	http://hdl.handle.net/11536/3757
ISSN:	0013-5194
期刊:	ELECTRONICS LETTERS
Volume:	27
Issue:	12
起始頁:	1079
結束頁:	1081
顯示於類別：	期刊論文

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