標題: | ENHANCED OXYGEN PLASMA STRIPPING OF P+-IMPLANTED NEGATIVE RESIST BY HYDROGEN PLASMA PRETREATMENT - TEMPERATURE EFFECTS |
作者: | LOONG, WA YEN, MS 交大名義發表 應用化學系 National Chiao Tung University Department of Applied Chemistry |
關鍵字: | ION IMPLANTATION;PLASMAS |
公開日期: | 6-六月-1991 |
摘要: | Hydrogen plasma pretreatment (90-115-degrees-C, 10-30 min) of P+-implanted (100 keV, 1 x 10(15) ion/cm2) HR-200 negative resist greatly reduces its resistance to oxygen plasma stripping at about 40-degrees-C. At lower temperature for hydrogen plasma pretreatment (down to 40-degrees-C) and higher temperature for oxygen plasma stripping (up to 115-degrees-C), the reduction to resistance of oxygen plasma stripping by hydrogen plasma pretreatment is much smaller. |
URI: | http://hdl.handle.net/11536/3757 |
ISSN: | 0013-5194 |
期刊: | ELECTRONICS LETTERS |
Volume: | 27 |
Issue: | 12 |
起始頁: | 1079 |
結束頁: | 1081 |
顯示於類別: | 期刊論文 |