ENHANCED OXYGEN PLASMA STRIPPING OF P+-IMPLANTED NEGATIVE RESIST BY HYDROGEN PLASMA PRETREATMENT - TEMPERATURE EFFECTS

Abstract

Hydrogen plasma pretreatment (90-115-degrees-C, 10-30 min) of P+-implanted (100 keV, 1 x 10(15) ion/cm2) HR-200 negative resist greatly reduces its resistance to oxygen plasma stripping at about 40-degrees-C. At lower temperature for hydrogen plasma pretreatment (down to 40-degrees-C) and higher temperature for oxygen plasma stripping (up to 115-degrees-C), the reduction to resistance of oxygen plasma stripping by hydrogen plasma pretreatment is much smaller.