表面傳導電子發射元件顯示技術之研究

Abstract

表面傳導電子發射元件用於顯示科技技術上是近年來的一大突破，稱之為Surface Conduction Electron-Emitter Display (SED)，SED 最大特徵除了外觀輕、薄與省電之外，它還可以達成 CRT 顯示器最棘手的邊緣角落影像顯示特性，一般認為 SED 是繼液晶、電漿顯示器之後，最備競爭優勢與量產性的新世代平面顯示器。本研究中我們在鈀金屬上使用高壓氫吸收處理來製作奈米級的裂縫，當作是表面傳導電子發射的發射源，從實驗量測及數值模擬計算，我們探討此新結構的場發射特性。利用三維有限差分時域粒子式的電磁模擬方法，我們先用簡單的結構與實驗數據做校正之後，再利用我們所得到的參數來對實際的新結構做模擬，此參數的可靠度可由合理的物理機制來解釋。此外，我們使用聚焦離子束來製作傳統的表面傳導電子發射極結構，由此方法所產生的製程變異在本研究中也有探討，經由三維有限差分時域粒子式的電磁模擬方法，我們可以計算不同結構電子的傳導機制、場發射效率和在陽極板的電流密度分佈。最後，經由此方法我們發現，新開發出來的結構擁有較好的場發射效率，這與實驗數據比對是相當吻合的。

We explore novel nanometer scaled gaps with different widths in palladium (Pd) thin-film strips by hydrogen absorption under high pressure conditions and different temperatures. Both the experimental measurement and numerical calculation are conducted to examine the electron conduction properties of the newly proposed surface conduction electron-emitters (SCEs). We have successfully calibrated the 3-D simulated results with the measured data by using 3-D finite-difference time-domain particle-in-cell (FDTD-PIC) method. Based on this model, we can investigate the emission efficiency for real structures of SCE. In this work, we also explore the effect of process variation on field emission characteristics in conventional surface conduction electron emitters which are fabricated by focused ion beam technique. And we demonstrate the conducting mechanism, the emission efficiency, and the current density distribution on the anode plate with the conventional SCE structure. Finally, the novel structure has better field emission efficiency is obtained through the FDTD-PIC simulation and they are coincided with the experiment results.