MOLYBDENUM SILICIDE SCHOTTKY CONTACTS TO GAAS

doi:10.1007/BF00695001

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHUANG, HF	en_US
dc.contributor.author	LEE, CP	en_US
dc.contributor.author	WU, SC	en_US
dc.date.accessioned	2014-12-08T15:05:18Z	-
dc.date.available	2014-12-08T15:05:18Z	-
dc.date.issued	1991-03-01	en_US
dc.identifier.issn	0957-4522	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/BF00695001	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3848	-
dc.description.abstract	The thermal stability of MoSi(x) Schottky contacts to GaAs has been studied. The contacts were analysed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), sheet resistance, and current-voltage measurements. We have studied MoSi(x) with the compositions x = 0, 0.3, 0.6, 1, and 2. The films were annealed at various temperatures up to 850-degrees-C. The thermal stability of the films is found to be x-dependent. The best composition for thermally stable Schottky contacts is Mo5Si3. Good Schottky characteristics were retained with annealing temperatures up to 850-degrees-C for 30 min.	en_US
dc.language.iso	en_US	en_US
dc.title	MOLYBDENUM SILICIDE SCHOTTKY CONTACTS TO GAAS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1007/BF00695001	en_US
dc.identifier.journal	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS	en_US
dc.citation.volume	2	en_US
dc.citation.issue	1	en_US
dc.citation.spage	28	en_US
dc.citation.epage	33	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1991FB09200008	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文