标题: | 低温复晶矽薄膜电晶体的电容特性及模拟 Analysis and Simulation of Capacitance Characteristic in Low-Temperature Polycrystalline Silicon Thin-Film Transistors |
作者: | 苏旻君 Min-Chun Su 冉晓雯 Hsiao-Wen Zan 显示科技研究所 |
关键字: | 复晶矽薄膜电晶体;准分子雷射回火法;晶粒边界位障;电容-电压;电容-频率;Polysilicon thin-film transistors (Poly-Si TFTs);Excimer laser annealing (ELA);Grain boundary barrier;Capacitance-Voltage;Capacitance-Frequency |
公开日期: | 2008 |
摘要: | 近年來,低温复晶矽薄膜电晶体已引起大量的研究,其应用相当广泛。低温复晶矽薄膜电晶体在面板技术的应用上,由于具有高迁移率,而有机会整合面板周边电路,实现系统面板的目标。当低温复晶矽薄膜电晶体应用为驱动电路时,交流信号将操作于闸极。因此低温复晶矽薄膜电晶体对于元件在交流信号下的频率响应就具有相当大的重要性。 在本篇論文中,使用准分子雷射制作低温复晶矽薄膜电晶体,利用阻抗分析仪,量测电容-电压和电容-频率来研究准分子雷射制作的复晶矽薄膜电晶体。调变在不同准分子雷射能量密度下的复晶矽薄膜品质,观察电容在不同的闸极偏压下对频率的变化。改变元件尺寸大小及制程步骤,来观察元件特性的变化。由于复晶矽薄膜的品质不同,在复晶矽结晶颗粒较小的时候,可以利用先前研究的模型或是RPI模型,考虑膜内单一能阶的缺陷,来解释元件的电容特性。当复晶矽的结晶颗粒逐渐增大,先前研究的模型或是RPI模型已经不能解释C-f曲线呈现斜直线的现象,单一能阶的缺陷已经不能解释,应由连续能阶的缺陷去解释。利用Seto模型的观念,考虑晶粒边界的能障对载子的影响,成功地建立一个模拟来解释C-f曲线关系。 In recent years, low temperature polycrystalline silicon thin-film transistors (poly-Si TFTs) have been investigated extensively for their wide applications. Poly-Si TFTs have been studied extensively for their application on system-on-panel (SOP) technology due to the high mobility. The low temperature poly-Si TFTs are operated under gate alternating current signal. Therefore, the studies of frequency response of low temperature poly-Si TFTs under gate alternating signal become very important. In this thesis, the low temperature polycrystalline silicon TFTs fabricated by the excimer laser annealing (ELA). To research the characteristics of ELA poly-Si TFTs is analyzing the capacitance-voltage (C-V) and capacitance-frequency (C-f) by using impedance analyzer. Here, by adjusting different poly silicon crystalline film qualities due to different excimer laser energy densities, the variation of the measured capacitance under different gate biases is observed. We change the dimension of poly-Si TFTs and the fabrication process to observe the characteristic of devices. As poly-Si grain is small, the capacitance characteristics of the poly-Si TFTs can be described by RPI model or the pre-studies which considering the mono-energetic (single energy level) of the trap. As the grain size becomes larger, RPI model or the pre-studies can not be applied to the case which C-f curve is sideling straight. The mono-energetic response is not able to fit experiment result, and we need to specify a continuous-distributed response time of the trap. Using the Seto’s model, we consider the energy barrier of the grain boundary, and the influence of the carriers. We make a new simulation to express the C-f curve successfully. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT009515501 http://hdl.handle.net/11536/38612 |
显示于类别: | Thesis |
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