標題: | IMPROVED ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES USING 2-DIMENSIONAL SOURCE ELECTRONS |
作者: | WU, JS LEE, CP CHANG, CY CHANG, KH LIU, DG LIOU, DC 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
公開日期: | 15-一月-1991 |
摘要: | We report the enhancement of peak-to-valley current ratios (PVCRs) of double-barrier resonant tunneling structures (DBRTSs) based on the AlGaAs/GaAs material system. The PVCRs as high as 25.4 and 18 have been obtained at 77 K for superlattice and alloy barrier structures with 0.2-mu-m undoped electrodes, respectively. These are the largest PVCRs to date for AlGaAs/GaAs DBRTSs. The large band bending across the undoped electrodes causes size quantization of the accumulation layer, resulting in better resonant tunneling characteristics. |
URI: | http://dx.doi.org/10.1063/1.347385 http://hdl.handle.net/11536/3880 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.347385 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 69 |
Issue: | 2 |
起始頁: | 1122 |
結束頁: | 1123 |
顯示於類別: | 期刊論文 |