標題: IMPROVED ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES USING 2-DIMENSIONAL SOURCE ELECTRONS
作者: WU, JS
LEE, CP
CHANG, CY
CHANG, KH
LIU, DG
LIOU, DC
交大名義發表
電控工程研究所
National Chiao Tung University
Institute of Electrical and Control Engineering
公開日期: 15-Jan-1991
摘要: We report the enhancement of peak-to-valley current ratios (PVCRs) of double-barrier resonant tunneling structures (DBRTSs) based on the AlGaAs/GaAs material system. The PVCRs as high as 25.4 and 18 have been obtained at 77 K for superlattice and alloy barrier structures with 0.2-mu-m undoped electrodes, respectively. These are the largest PVCRs to date for AlGaAs/GaAs DBRTSs. The large band bending across the undoped electrodes causes size quantization of the accumulation layer, resulting in better resonant tunneling characteristics.
URI: http://dx.doi.org/10.1063/1.347385
http://hdl.handle.net/11536/3880
ISSN: 0021-8979
DOI: 10.1063/1.347385
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 69
Issue: 2
起始頁: 1122
結束頁: 1123
Appears in Collections:Articles