标题: 四元硒化合物MnAgBi3Se6、MnAgSb3Se6与Fe2Ag5Sb13Se24的合成、结构与物性分析
Synthesis and Characterization of New Quaternary Selenides : MnAgBi3Se6, MnAgSb3Se6 and Fe2Ag5Sb13Se24
作者: 郑乃伦
李积琛
应用化学系硕博士班
关键字: 热电材料;结构;硒化合物;thermoelectrics;structure;selenide compounds
公开日期: 2007
摘要: 本论文研究成功地以固态烧结法在1023K下合成出具有矿物Benjaminite结构之新四元硒化合物MnAgBi3Se6、MnAgSb3Se6与Fe2Ag5Sb13Se24。利用单晶绕射仪收集三种化合物的绕射点,解析得空间群为Cm。MnAgBi3Se6晶胞常数为a = 13.479(3) Å,b = 4.1007(8) Å,c = 21.150(4) Å,β = 104.10(3) ° (Z = 4),R1/ wR2 = 0.0327/0.0621。MnAgSb3Se6晶胞常数为a = 13.395(3) Å,b = 4.0534(8) Å,c = 20.775(4) Å,β = 102.96(3) ° (Z = 4),R1/ wR2 = 0.0384/0.0886。Fe2Ag5Sb13Se24晶胞常数为a = 13.490(3) Å,b = 4.0972(8) Å,c = 20.763(4) Å,β = 102.42(3) °(Z = 1),R1/ wR2 = 0.0345/0.0866。MnAgBi3Se6在300K电阻率约为87.5 Ohm.cm;MnAgSb3Se6为130.7 Ohm.cm;Fe2Ag5Sb13Se24为1.2638×10-2 Ohm.cm,三种化合物的电阻率皆是随温度上升而下降的半导体行为。UV-VIS反射式吸收光谱得知半导体能距皆小于0.62eV。由Seebeck系数量测得知化合物Fe2Ag5Sb13Se24为P型半导体,在温度320K时系数为398 μV/K。磁性量测显示MnAgBi3Se6与MnAgSb3Se6为顺磁性,Fe2Ag5Sb13Se24 在350K以下皆具铁磁性。TB-LMTO法电子自旋极化(spin-polarized)理论计算显示反铁磁性的MnAgBi3Se6与MnAgSb3Se6、铁磁性的Fe2Ag5Sb13Se24皆较非磁性(nonmagnetic)计算结果稳定。
Three new quaternary selenides MnAgBi3Se6, MnAgSb3Se6, and Fe2Ag5Sb13Se24 were prepared by directly reacting the elements in stoichiometric ratios at 1023K. Their structures have been determined by single-crystal X-ray diffraction. All phases are isostructural to the Benjaminite type. MnAgBi3Se6, MnAgSb3Se6 and Fe2Ag5Sb13Se24 crystallize in the monoclinic space group Cm with a = 13.479(3) Å, b = 4.1007(8) Å, c = 21.150(4) Å, β = 104.10(3)° (Z = 4), R1/ wR2 = 0.0327/0.0621 , a = 13.395(3) Å, b = 4.0534(8) Å, c = 20.775(4) Å, β = 102.96(3)° (Z = 4), R1/ wR2 = 0.0384/0.0886 and a = 13.490(3) Å, b = 4.0972(8) Å, c = 20.763(4) Å, β = 102.42(3)° (Z = 1),R1/ wR2 = 0.0345/0.0866, respectively. The room temperature resistivity of MnAgBi3Se6, MnAgSb3Se6 and Fe2Ag5Sb13Se24 are 87.5, 130.7 and 1.2638×10-2 Ohm.cm, respectively. For all compounds, the resistivity decrease with increasing temperature, indicative of semiconducting behaviors. UV-Visible absorption measurements show that the band gaps of all phases are lower than 0.62 eV. Seebeck coefficient of Fe2Ag5Sb13Se24 is 398 μV/K at 320 K, exhibiting p-type semiconductor. Temperature dependence susceptibilities measurements indicate paramagnetic property for MnAgBi3Se6 and MnAgSb3Se6 and ferromagnetic property for Fe2Ag5Sb13Se24 blow 350K. Band structure calculations using TB-LMTO method show that the calculations with spin-polarized models are more stable than the nonmagnetic models.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT009525533
http://hdl.handle.net/11536/38961
显示于类别:Thesis


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