| Title: | BEHAVIOR OF THE 1ST LAYER GROWTH IN GAAS MOLECULAR-BEAM EPITAXY |
| Authors: | LIU, DG LEE, CP CHANG, KH WU, JS LIOU, DC 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
| Issue Date: | 1-Oct-1990 |
| URI: | http://dx.doi.org/10.1063/1.103445 http://hdl.handle.net/11536/3990 |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.103445 |
| Journal: | APPLIED PHYSICS LETTERS |
| Volume: | 57 |
| Issue: | 14 |
| Begin Page: | 1392 |
| End Page: | 1394 |
| Appears in Collections: | Articles |
- Compositional grading in GaAsSb grown on GaAs substrates / Lin, Y. M.;Chen, C. H.;Wu, J. S.;Lee, C. P.
- NOVEL ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED BY 2-STAGE MOLECULAR-BEAM EPITAXY / CHEN, HR;CHANG, CY;TSAI, KL;TSANG, JS;LEE, CP
- Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperature / Chen, NC;Wang, PY;Chen, JF
- Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy / Fan, W. C.;Huang, S. H.;Chou, W. C.;Tsou, M. H.;Yang, C. S.
- Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy / Nhu Quynh Diep;Liu, Cheng-Wei;Wu, Ssu-Kuan;Chou, Wu-Ching;Sa Hoang Huynh
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