完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWang, SCen_US
dc.contributor.authorChi, Sen_US
dc.contributor.authorHsieh, KCen_US
dc.contributor.authorYang, YDen_US
dc.contributor.authorCheng, WHen_US
dc.date.accessioned2014-12-08T15:01:33Z-
dc.date.available2014-12-08T15:01:33Z-
dc.date.issued1997-08-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-997-0284-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/399-
dc.description.abstractEvidence of the Au segregation within the crack region in laser welded Au-coated Invar material for semiconductor laser packaging is investigated. Results obtained from the metallography, scanning electron microscope (SEM) mapping, energy dispersive spectrometer (EDS) Line profile,and Auger electron spectroscopy find that the cracks in the welded joints occur around the Au rich boundaries. The SEM Au mapping and EDS line profiles show that Au accumulates at the crack region. This direct observation indicates that one of the primary causes of cracks in laser welded Au-coated materials is due to the segregation of Au in the final stage of solidification. Detailed knowledge of the defect formation mechanisms in laser welded Au-coated materials is important for the practical design and fabrication of reliable optoelectronic packaging.en_US
dc.language.isoen_USen_US
dc.subjectAu coatingen_US
dc.subjectInvar materialen_US
dc.subjectlaser weldingen_US
dc.subjectoptoelectronic packagingen_US
dc.titleDirect evidence of Au segregation in laser welded Au-coated Invar materialen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11664-997-0284-4en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume26en_US
dc.citation.issue8en_US
dc.citation.spageL21en_US
dc.citation.epageL23en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:A1997XT94600016-
dc.citation.woscount3-
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XT94600016.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。