标题: | Formation and nonvolatile memory characteristics of W nanocrystals by in-situ steam generation oxidation |
作者: | Chen, Shih-Cheng Chang, Ting-Chang Hsieh, Chieh-Ming Li, Hung-Wei Sze, S. M. Nien, Wen-Ping Chan, Chia-Wei Yeh (Huang), Fon-Shan Tai, Ya-Hsiang 电子工程学系及电子研究所 光电工程学系 显示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
关键字: | Tungsten;Nonvolatile memory;Nanocrystals;In-situ stem generation |
公开日期: | 30-十二月-2010 |
摘要: | The authors provide the formation and memory effects of W nanocrystals nonvolatile memory in this study. The charge trapping layer of stacked a-Si and WSi(2) was deposited by low pressure chemical vapor deposition (LPCVD) and was oxidized by in-situ steam generation system to form uniform W nanocrystals embedded in SiO(2). Transmission electron microscopy analyses revealed the microstructure in the thin film and X-ray photon-emission spectra indicated the variation of chemical composition under different oxidizing conditions. Electrical measurement analyses showed the different charge storage effects because the different oxidizing conditions influence composition of trapping layer and surrounding oxide quality. Moreover, the data retention and endurance characteristics of the formed W nanocrystal memory devices were compared and studied. The results show that the reliability of the structure with 2% hydrogen and 98% oxygen at 950 degrees C oxidizing condition has the best performance among the samples. (C) 2010 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2010.08.167 http://hdl.handle.net/11536/4018 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2010.08.167 |
期刊: | THIN SOLID FILMS |
Volume: | 519 |
Issue: | 5 |
起始页: | 1677 |
结束页: | 1680 |
显示于类别: | Conferences Paper |
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