| 標題: | CHARACTERIZATION OF A GAAS CURRENT-CONTROLLED BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR |
| 作者: | YARN, KF WANG, YH CHANG, CY 電控工程研究所 Institute of Electrical and Control Engineering |
| 公開日期: | 20-Aug-1990 |
| URI: | http://dx.doi.org/10.1063/1.103417 http://hdl.handle.net/11536/4036 |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.103417 |
| 期刊: | APPLIED PHYSICS LETTERS |
| Volume: | 57 |
| Issue: | 8 |
| 起始頁: | 777 |
| 結束頁: | 779 |
| Appears in Collections: | Articles |
- MOLECULAR-BEAM EPITAXY GROWN GAAS BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE POWER TRANSISTOR / YARN, KF;CHANG, CY;WANG, YH;WANG, RL
- A NOVEL GAAS CURRENT-CONTROLLED BIPOLAR UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY / YARN, KF;WANG, YH;CHANG, CY
- GEOMETRY-EFFECTS ON THE GAAS BIPOLAR UNIPOLAR NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR / YARN, KF;WANG, YH;CHANG, CY
- VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTURE / YARN, KF;WANG, YH;CHANG, CY;CHANG, CS
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