VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTURE

Title:	VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTURE
Authors:	YARN, KF WANG, YH CHANG, CY CHANG, CS 電控工程研究所 Institute of Electrical and Control Engineering
Issue Date:	1-Jun-1990
URI:	http://hdl.handle.net/11536/4095
ISSN:	0956-3768
Journal:	IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS
Volume:	137
Issue:	3
Begin Page:	219
End Page:	224
Appears in Collections:	Articles

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APA	YARN, K., WANG, Y., CHANG, C., & CHANG, C. (1990). VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTURE. WOS:A1990DE42000006.
Bibtex	@article{YARN1990VOLTAGE-CONTROLLED, title={VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTURE}, author={YARN, KF and WANG, YH and CHANG, CY and CHANG, CS}, journal={WOS:A1990DE42000006}, year={1990}, url={https://ir.lib.nycu.edu.tw/handle/11536/4095}, }