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dc.contributor.author羅鴻鈞en_US
dc.contributor.authorLo, Hung-Chunen_US
dc.contributor.author呂志鵬en_US
dc.contributor.author陳家富en_US
dc.contributor.author陳貴賢en_US
dc.contributor.author林麗瓊en_US
dc.contributor.authorLeu, Jih-Perngen_US
dc.contributor.authorChen, Chia-Fuen_US
dc.contributor.authorChen, Kuei-Hsienen_US
dc.contributor.authorChen, Li-Chyongen_US
dc.date.accessioned2014-12-12T01:22:17Z-
dc.date.available2014-12-12T01:22:17Z-
dc.date.issued2011en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT079218834en_US
dc.identifier.urihttp://hdl.handle.net/11536/40404-
dc.description.abstract製作高準直性一維奈米結構需要多道製程的配合,除了製作遮罩,還需輔以乾/濕蝕刻等方式來製作,此過程不但耗時耗力,更需要投入大量的經費,本論文在第一部份探討中,以矽甲烷、甲烷為主要反應氣體,在不同材料的晶圓上形成不同結晶相之碳化矽,利用碳化矽具備有極佳的機械特性,在電漿環境中相對的擁有較佳的抗蝕刻能力,進而開發出以一道製程便能製作出針尖半徑為數奈米(Si nanotip: 1~2nm; GaP nanotip: 2~5nm),且具備高準直性一維奈米結構之技術,由於此電漿反應器所生成之電漿呈現一發散之形狀,因此具備有可大面積製作的優點(目前已經可在6吋矽晶圓上製作出均勻之奈米針)。由於在製作過程中碳化矽的形成為成長機制而奈米針卻屬於蝕刻機制下的產物,因此如何在電漿環境中維持這兩種機制的同時進行便是此技術的關鍵。 本論文第二部分的研究內容以一維奈米結構之製備為主軸,搭配上各種不同研究主題所需之後製程,以滿足各個應用研究的需求。首先,我們利用一維奈米針具備有超尖銳的特性進行場發射研究,根據推測,由於此一結構外型具備非常強的增強因子(根據計算其β factor約為103),加上矽基板與碳化矽遮罩之間能帶的轉換造成電子穿遂能力的增加,也因此經由此一方式製作出來之一維矽奈米針之turn-on voltage為0.35 V/μm,且當施加電場升至1 V/μm的環境下,其電流密度可達3.0 mA/cm2,藉由此一研究特性的探討,我們發覺到此一維奈米結構由於外型的改變,對其表面電場的分佈也很有可能造成非常大的差異,而此一發現在生物醫學上面的研究也指出對細胞的生長有著明顯不同的影響,因此我們也利用表面改質的方式改變表面電位,並較為深入的探討此一實驗參數改變與神經細胞成長之間的關連性。在進行細胞培養的過程中,我們發現到試片表面的親、疏水特性也扮演著非常重要的角色,因此我們針對不同深寬比的奈米結構進行親、疏水性的研究與探討。 另外,對於一維奈米材料/結構而言,由於具備有非常高的比表面積(蝕刻後/蝕刻前之表面積可增加103倍),因此若結合上適當的後製程參數的調控,對DNA而言,可在10-13M的濃度條件下,透過表面增強拉曼光譜儀的掃瞄直接偵測到訊號,這也意味著此一技術將可有效改善目前所使用之疾病檢測方法之極限,以真正達到早期發現、早期治療的目標。zh_TW
dc.description.abstractGenerally, it requires multiple processes sub or mask writing, dry and/or wet etchings to produce well-aligned 1-D nanostructure. These processed are expensive and take time to manpower for operation. In this thisis work, we developed SMDE techniques to fabricate nanotip arrays in a single process, which is applicable on variour substrate such as Si, GaP, sappire, silica, and metals including Ai and Cu. Detailed characterization and mechanism studies are reported in this work. The second part of the thesis presents the field emission performance, cell culture property, wetting property, and surface enhanced Raman spectroscopy utilizing the Si nanotip arrays. Significant enhancement/reduction of the above mentioned properties has been observed. It’s concluded that nanotip arrays produced by the SMDE process are simple and effective in these applications. Therefore SMDE provide a generally applicable process to produce. 1-D nanotip arrays on various substrates, which have been demonstrated very effective in field emission and bio-related applications, offer simple and inexpensive technique for various applications.en_US
dc.language.isoen_USen_US
dc.subject化學氣相沈積zh_TW
dc.subject高準直奈米針zh_TW
dc.subject一維奈米結構zh_TW
dc.subject碳化矽zh_TW
dc.subject自組裝乾蝕刻技術zh_TW
dc.subjectchemical vapor deposition (CVD)en_US
dc.subjectwell aligned nanotip arraysen_US
dc.subject1-D nano structureen_US
dc.subjectSiCen_US
dc.subjectself-masked dry etching (SMDE) technologyen_US
dc.title一維奈米針矩陣的製作與特性分析zh_TW
dc.titleSynthesis and Characterization of One-Dimensional Nanotip Arraysen_US
dc.typeThesisen_US
dc.contributor.department材料科學與工程學系zh_TW
Appears in Collections:Thesis


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