标题: | 50um CuNi/SnAg 金属垫层覆晶焊锡凸块之电迁移研究 Study of Electro-migration for Flip-Chip Solder bumps with 50um CuNi/SnAg |
作者: | 江诗宽 Chiang, Shih-Kuan 陈智 Chen, Chih 工学院半导体材料与制程设备学程 |
关键字: | 覆晶焊锡凸块;Flip-Chip Solder bumps |
公开日期: | 2010 |
摘要: | 高接脚密度、缩减封装体积等优势,让覆晶焊锡在电子产品走向 轻、薄、短、小的趋势中,成为高阶元件的主流封装型式。伴随积体 电路高电流、小尺寸的设计变化,覆晶焊锡接点内的电迁移现象成为 元件可靠度的影响关键。本研究设计并制造凯文结构來研究铜镍垫层于共晶锡铅焊锡接着下,其电迁移活化能的大小,在量测上,利用凯文结构來观测焊锡凸块在电迁移下电阻变化情形,并定义电迁移破坏准当其阻值上升至初始的1.2 倍。然而大部分的研究都定义当整个回路开路时,为其破坏标准。 本研究探讨在在铜镍垫层的无铅覆晶锡银焊锡接点于 170℃ 的温度下,通以电流 0.5 A & 0.6 A 之电迁移行为及其破坏机制。利用凯文结构来观察焊锡凸块在电迁移下电阻变化情形,不同电流的破坏机制将个别被讨论。 Flip-chip technology has become a mainstream trend in advanced electronic packaging because of its capability of higher I/O density and smaller package size. With higher current and smaller size trends, electromigration in flip-chip solder has become an critical of reliability concern. Activation energy of electromigration is investigated in eutectic SnAg flip-chip solder joints with thick under-bump-metallizations (UBMs) of 5-μm Cu/3-μm Ni. We fabricate the Kelvin probes to monitor the bump resistance during the current stressing, and define the electromigration failure as the bump resistance increase reaches 20% of its initial value. Most of the previous studies defined the failure of the electromigration when the stressing circuit was open. In this study, we fabricated SnPb solder joints with under-bump-metallizations (UBMs) of Cu /Ni. The sample were subjected to electromigration tests by 0.5A &0.6A at 170℃. The electromigration behavior and the mechanism which cause the damage of the bumps were been monitored at various stages of electromigration. The Kevin probes were employed to monitor the changes for the bump resistance during the electromigration tests and the mechanisms which cause damage to the joints were discussed for these two different currents, respectively. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT079375520 http://hdl.handle.net/11536/40695 |
显示于类别: | Thesis |
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