| 標題: | INFRARED SPECTROSCOPIC STUDY OF MERCURY-SENSITIZED PHOTO-CVD SILICON-OXIDE |
| 作者: | LAN, WH TU, SL YANG, SJ HUANG, KF 電子物理學系 光電工程學系 Department of Electrophysics Department of Photonics |
| 公開日期: | 1-六月-1990 |
| URI: | http://hdl.handle.net/11536/4091 |
| ISSN: | 0021-4922 |
| 期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
| Volume: | 29 |
| Issue: | 6 |
| 起始頁: | 997 |
| 結束頁: | 1003 |
| 顯示於類別： | 期刊論文 |
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- 具有光化學氣相沈積及電漿加強化學氣相沈積氮化矽保護層之砷化鎵功率金屬半導體場效電晶體之研究 / 林文中;Lin, Wen Chung;張翼;Edward Y. Chang
- REACTION-MECHANISM OF MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITED SILICON-OXIDE / LAN, WH;LIN, WJ;TU, SL;YANG, SJ;HUANG, KF
- Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization / Cheng, YL;Wang, YL;Liu, CP;Wu, YL;Lo, KY
- 低介電常數材料之研究及其在深次微米金屬半導體積體電路之製程整合之研究 / 鄭義榮;Yi-Lung Cheng;馮明憲;Ming-Shiann Feng
- New insight into the degradation mechanism of nitride spacer with different post-oxide in submicron LDD n-MOSFET's / Yih, CM;Wang, CL;Chung, SS;Wu, CC;Tan, W
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