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dc.contributor.authorLAN, WHen_US
dc.contributor.authorTU, SLen_US
dc.contributor.authorYANG, SJen_US
dc.contributor.authorHUANG, KFen_US
dc.date.accessioned2014-12-08T15:05:33Z-
dc.date.available2014-12-08T15:05:33Z-
dc.date.issued1990-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/4091-
dc.language.isoen_USen_US
dc.titleINFRARED SPECTROSCOPIC STUDY OF MERCURY-SENSITIZED PHOTO-CVD SILICON-OXIDEen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume29en_US
dc.citation.issue6en_US
dc.citation.spage997en_US
dc.citation.epage1003en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:A1990DM20800001-
dc.citation.woscount13-
Appears in Collections:Articles


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