VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTURE

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DC 欄位	值	語言
dc.contributor.author	YARN, KF	en_US
dc.contributor.author	WANG, YH	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	CHANG, CS	en_US
dc.date.accessioned	2014-12-08T15:05:33Z	-
dc.date.available	2014-12-08T15:05:33Z	-
dc.date.issued	1990-06-01	en_US
dc.identifier.issn	0956-3768	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4095	-
dc.language.iso	en_US	en_US
dc.title	VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTURE	en_US
dc.type	Article	en_US
dc.identifier.journal	IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS	en_US
dc.citation.volume	137	en_US
dc.citation.issue	3	en_US
dc.citation.spage	219	en_US
dc.citation.epage	224	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1990DE42000006	-
dc.citation.woscount	1	-
顯示於類別：	期刊論文

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