錳、鉻摻雜InGaZnO4非晶態透明導電薄膜的物性研究

Abstract

本實驗的動機，在於嘗試將錳、鉻元素摻雜至非晶態半導體InGaZnO4裡，以期製備出非晶型稀磁性半導體，並探討其物理特性。在探討的基板溫度範圍內，以脈衝雷射鍍膜製備的薄膜均為非晶相，未生成錳、鉻元素的第二相。從磁性量測結果觀察到磁滯效應，且溫度與摻雜濃度均會對磁性反應強弱造成影響，而磁性來源可由束縛磁極化子模型解釋。薄膜的載子遷移率可達20cm2V-1S-1以上，符合薄膜電晶體應用要求。從光性分析得知，在可見光範圍內穿透率達80％以上，錳、鉻元素摻雜會降低吸收邊緣的穿透率，但不影響能隙大小。

We try to fabricate amorphous diluted magnetic semiconductors by doping Mn, Cr into amorphous InGaZnO4 transparent conducting oxide, and study the physical properties of Mn, Cr-doped amorphous InGaZnO4 thin films. The thin films were fabricated on sapphire substrates by pulsed laser deposition. All thin films are amorphous with no secondary phase induced by Mn, Cr dopings. Apparent magnetic hysteresis effects at room temperature are observed. The hysteresis effect is significantly influenced by substrate temperature during deposition and doping concentration. The magnetic behaviors can be explained by bound magnetic polaron model. The films display carrier mobility larger than 20cm2V-1S-1 and have over 80% of transparency in the visible light region. The transparency near absorption edge is reduced, but the band gap is not influence by doped Mn, Cr.