标题: 高介电系数介电质于五苯有机薄膜电晶体及金氧半场效电晶体之研究
The Researches of High-k Dielectrics on Pentacene Based OTFTs and MOSFETs
作者: 张明峯
Chang, Ming-Feng
李柏璁
荆凤德
Lee, Po-Tsung
Chin, Albert
光电工程学系
关键字: pentacene;High-k;OTFT;MOSFET;五苯;高介电系数介电质;有机薄膜电晶体;金氧半场效电晶体
公开日期: 2009
摘要: 由于以五苯(pentacene)为主动层之有机薄膜电晶体可广泛的应用于无线射频身分识别标签、逻辑电路、显示器驱动元件、感测元件,因此五苯有机薄膜电晶体成为世界上各研发单位的重要研究课题之ㄧ,且在元件性能上屢有重大的突破与进展。在本研究論文中,我们将探讨高介电系数介电层在有机薄膜电晶体的应用,并研究分析高介电系数介电层对于元件特性的改善。
首先我们制作与整合高介电系数氧化铪镧(HfLaO)介电层与氮化钽(TaN)金属闸极于五苯有机薄膜电晶体,此元件量测到低的操作电压、小的次临界摆幅、低的临限电压、良好的场效迁移率。此良好的元件特性可以说明氧化铪镧介电层适合应用于有机薄膜电晶体。
为了达到未来可挠式电子的需求,我们降低制程温度在可挠的聚亚醯胺基板上制作氧化铪镧/五苯有机薄膜电晶体。此元件也展现良好的元件特性,在低的2.5伏操作电压下,量测到0.13 V/decade的次临界摆幅、-1.24伏的临限电压、0.13 cm2/V•s的场效迁移率。
根据制作高介电系数氧化铪镧为介电层之五苯有机薄膜电晶体所得到的良好电性,我们进一步发展使用高介电系数氮氧化铪(HfON)为电荷捕捉层,在可挠的聚亚醯胺基板上制作非挥发性五苯有机薄膜电晶体记忆体元件。利用高介电系数介电材料氮氧化铪为电荷捕捉层、氧化铪镧为电荷阻挡层和二氧化铪(HfO2)为电荷穿隧层,五苯有机薄膜电晶体记忆体元件可以得到低的写入与抹除电压。
最后我们探讨在氮氧化矽(SiON)上,以高介电系数氧化铪铝(HfAlO)介电层为覆盖层去调变临界电压,使其适用于p型金氧半场效电晶体,我们也分析调变临界电压的物理机制。在最佳1.5奈米厚的氮氧化矽,氮化钼(MoN)/氧化铪铝/氮氧化矽p型金氧半场效电晶体可得到0.85奈米的等效氧化层厚度、低的临界电压、良好的次临界摆幅、高的场效迁移率。平带电压朝正电压方向改变被证明是由于氧化铝(Al2O3)与氮氧化矽的交互扩散与反应,形成氧化矽铝(AlSiO)矽化物并造成带电的氧空缺。
Due to the widespread applications such as radio frequency identification tags, logic circuits, display driver and sensors, the pentacene-based organic thin film transistors (OTFTs) are widely investigated and have many remarkable breakthroughs in performance. In this dissertation, we investigate the application of high dielectric constant (κ) dielectric to improve the performance and function of OTFTs.
First of all, we demonstrate the integration of HfLaO high-κ dielectric and TaN metal gate into pentacene OTFTs to get low operation voltage, small sub-threshold swing (SS), low threshold voltage (VT) and good field effect mobility (μ). Theses results indicate HfLaO is a good dielectric for OTFTs.
In order to meet the requirements of future flexible electronics, we decrease the process temperature to develop HfLaO/pentacene OTFT on flexible polyimide substrates. This device also shows good device integrity of a small SS of 0.13 V/decade and a VT of −1.25 V and a good μ of 0.13 cm2/V•s at a low operating voltage of 2.5 V.
Based on the good electrical characteristics of pentacene OTFT incorporated with high-κ HfLaO dielectrics, we further use high-κ HfON as a charge trapping layer to develop organic pentacene non-volatile OTFT memory fabricated on flexible polyimide substrate. By using high-κ HfON□ □as a charge trapping layer, HfLaO as a blocking layers and HfO2 as a tunneling layer, the pentacene OTFT memory shows record low program/erase voltage.
Finally, we study the High-κ HfAlO as a capping layer on SiON to modulate VT for p-MOSFET application. The mechanisms of VT modulation also have been investigated. Under the optimized 1.5 nm SiON, good device integrity of small 0.85 nm equivalent-oxide-thickness, low Vt, good SS and high mobility are obtained in the MoN/HfAlO/SiON p-MOSFETs. The large positive flatband voltage shift is explained due to the forming charged oxygen vacancies in AlSiO silicate, which is originated from diffusion and interaction of Al2O3 and SiON.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT079524822
http://hdl.handle.net/11536/41239
显示于类别:Thesis


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