FORMATION OF 0.1-MU-M N+ P JUNCTION BY AS+ IMPLANTATION THROUGH PT OR PTSI FILM

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	TSUI, BY	en_US
dc.contributor.author	CHEN, MC	en_US
dc.date.accessioned	2014-12-08T15:05:36Z	-
dc.date.available	2014-12-08T15:05:36Z	-
dc.date.issued	1990-04-01	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.345346	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4142	-
dc.language.iso	en_US	en_US
dc.title	FORMATION OF 0.1-MU-M N+ P JUNCTION BY AS+ IMPLANTATION THROUGH PT OR PTSI FILM	en_US
dc.type	Note	en_US
dc.identifier.doi	10.1063/1.345346	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	67	en_US
dc.citation.issue	7	en_US
dc.citation.spage	3524	en_US
dc.citation.epage	3526	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1990CV63900049	-
dc.citation.woscount	3	-
顯示於類別：	期刊論文