IMPROVEMENT ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON CONTACTED N+-P JUNCTIONS WITH HIGH-FIELD STRESSING

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WU, SL	en_US
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.date.accessioned	2014-12-08T15:05:37Z	-
dc.date.available	2014-12-08T15:05:37Z	-
dc.date.issued	1990-03-12	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.102606	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4156	-
dc.language.iso	en_US	en_US
dc.title	IMPROVEMENT ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON CONTACTED N+-P JUNCTIONS WITH HIGH-FIELD STRESSING	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.102606	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	56	en_US
dc.citation.issue	11	en_US
dc.citation.spage	1031	en_US
dc.citation.epage	1033	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1990CT09900016	-
dc.citation.woscount	2	-
顯示於類別：	期刊論文