HIGH-PERFORMANCE POLYSILICON CONTACTED SHALLOW JUNCTIONS FORMED BY STACKED-AMORPHOUS-SILICON FILMS

標題:	HIGH-PERFORMANCE POLYSILICON CONTACTED SHALLOW JUNCTIONS FORMED BY STACKED-AMORPHOUS-SILICON FILMS
作者:	WU, SL LEE, CL LEI, TF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-一月-1992
摘要:	A high-performance polysilicon contacted shallow junction diode formed by using a stacked-amorphous-silicon (SAS) film as the diffusion source is reported. The diode-exhibited a very low leakage current (less-than-or-equal-to 1 nA/cm2 at -5 V), a very high breakdown voltage (greater-than-or-equal-to 100 V), and a forward ideality factor m less-than-or-equal-to 1.05 over 7 decades.
URI:	http://dx.doi.org/10.1109/55.144939 http://hdl.handle.net/11536/3577
ISSN:	0741-3106
DOI:	10.1109/55.144939
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	13
Issue:	1
起始頁:	23
結束頁:	25
顯示於類別：	期刊論文

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