HIGH-PERFORMANCE POLYSILICON CONTACTED SHALLOW JUNCTIONS FORMED BY STACKED-AMORPHOUS-SILICON FILMS

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DC 欄位	值	語言
dc.contributor.author	WU, SL	en_US
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.date.accessioned	2014-12-08T15:05:03Z	-
dc.date.available	2014-12-08T15:05:03Z	-
dc.date.issued	1992-01-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.144939	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3577	-
dc.description.abstract	A high-performance polysilicon contacted shallow junction diode formed by using a stacked-amorphous-silicon (SAS) film as the diffusion source is reported. The diode-exhibited a very low leakage current (less-than-or-equal-to 1 nA/cm2 at -5 V), a very high breakdown voltage (greater-than-or-equal-to 100 V), and a forward ideality factor m less-than-or-equal-to 1.05 over 7 decades.	en_US
dc.language.iso	en_US	en_US
dc.title	HIGH-PERFORMANCE POLYSILICON CONTACTED SHALLOW JUNCTIONS FORMED BY STACKED-AMORPHOUS-SILICON FILMS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.144939	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	13	en_US
dc.citation.issue	1	en_US
dc.citation.spage	23	en_US
dc.citation.epage	25	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1992GV84800008	-
dc.citation.woscount	4	-
顯示於類別：	期刊論文

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