Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 陳家欣 | en_US |
dc.contributor.author | Jia-Hsing Chen | en_US |
dc.contributor.author | 韋光華 | en_US |
dc.contributor.author | Kung-Hwa Wei | en_US |
dc.date.accessioned | 2014-12-12T01:26:49Z | - |
dc.date.available | 2014-12-12T01:26:49Z | - |
dc.date.issued | 2010 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#GT079575505 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/41609 | - |
dc.description.abstract | 在這項研究中,我們發現藉由即時電化學摻雜的方式形成p-i-n接面是一種有效且可行的方法,可以提高太陽能電池的性能。我們將三氟甲磺酸金屬[LiCF3SO3, KCF3SO3, Ca(CF3SO3)2, Zn(CF3SO3)2] /PEO加入MEH-PPV/PCBM混合的主動層的光伏元件中,並施加偏壓以形成p-i-n接面。 Auger元素成份縱深分佈分析及交流式電容分析法顯示了經由摻雜的元件,在大約100nm的薄膜中,其正離子和負離子因分佈不均而形成一種非對稱結構,且在較高的偏壓下,其本質層(intrinsic layer)會變得較薄。原子力顯微鏡(AFM)和穿透式電子顯微鏡(TEM)顯示加了三氟甲磺酸金屬/PEO在MEH-PPV/PCBM會改善此複合薄膜的形態。在各種不同的摻雜的元件中,LiCF3SO3/PEO加入MEH-PPV/PCBM的混合物具有最高的功率轉換效率,相對於參照的(MEH-PPV/PCBM)元件而言,其功率轉換效率增加了40%。 | zh_TW |
dc.description.abstract | In this study, we found that the formation of p–i–n junction through in situ electrochemical doping is a promising way to enhance the performance of polymer photovoltaic devices. We applied a pre-bias to metal triflate [LiCF3SO3, KCF3SO3, Ca(CF3SO3)2, Zn(CF3SO3)2] /poly (PEO)–incorporated poly (MEH-PPV)/(PCBM) photovoltaic devices to form p–i–n junctions in their active layers. Auger depth profile analyses and Alternating-current capacitance analyses of these doped devices revealed that the positive and negative ions distributed unequally to form an asymmetrical p-i-n structure in a thin layer of c.a. 100nm and the intrinsic layer became thinner when formed under a higher pre-bias voltage, respectively. Atomic force microscopy and transmission electron microscopy revealed that the addition of metal triflate/PEO to MEH-PPV/PCBM improved the morphology of the composite films. Among the various doped devices, the MEH-PPV/PCBM device incorporating a LiOTf/PEO mixture exhibited the highest power conversion efficiency, a 40% increase relative to that of the reference device (MEH-PPV/PCBM). | en_US |
dc.language.iso | zh_TW | en_US |
dc.subject | 太陽能電池 | zh_TW |
dc.subject | 摻雜 | zh_TW |
dc.subject | p-i-n接面 | zh_TW |
dc.subject | Polymer Photovoltaic Devices | en_US |
dc.subject | Electrochemical Doping | en_US |
dc.subject | MEH-PPV/PCBM | en_US |
dc.subject | p–i–n junction | en_US |
dc.title | 藉由即時電化學的摻雜在主動層以提昇高分子太陽能電池的效率 | zh_TW |
dc.title | Enhancing Efficiencies of Polymer Photovoltaic Devices by Employing In-situ Electrochemical Doping in the Active Layer | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 工學院半導體材料與製程設備學程 | zh_TW |
Appears in Collections: | Thesis |