A QUASI-2-DIMENSIONAL ANALYTICAL MODEL FOR THE TURN-ON CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS

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DC Field	Value	Language
dc.contributor.author	LIN, PS	en_US
dc.contributor.author	GUO, JY	en_US
dc.contributor.author	WU, CY	en_US
dc.date.accessioned	2014-12-08T15:05:37Z	-
dc.date.available	2014-12-08T15:05:37Z	-
dc.date.issued	1990-03-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/16.47771	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4160	-
dc.language.iso	en_US	en_US
dc.title	A QUASI-2-DIMENSIONAL ANALYTICAL MODEL FOR THE TURN-ON CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/16.47771	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	37	en_US
dc.citation.issue	3	en_US
dc.citation.spage	666	en_US
dc.citation.epage	674	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	工學院	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	College of Engineering	en_US
dc.identifier.wosnumber	WOS:A1990CR84400020	-
dc.citation.woscount	59	-
Appears in Collections:	Articles

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