| 標題: | THE EFFECT OF GATE ELECTRODES USING TUNGSTEN SILICIDES AND OR POLYSILICON ON THE DIELECTRIC CHARACTERISTICS OF VERY THIN OXIDES |
| 作者: | CHENG, HC CHAO, CY SU, WD CHANG, SW LEE, MK WU, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公開日期: | 1-三月-1990 |
| URI: | http://dx.doi.org/10.1016/0038-1101(90)90202-P http://hdl.handle.net/11536/4162 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(90)90202-P |
| 期刊: | SOLID-STATE ELECTRONICS |
| Volume: | 33 |
| Issue: | 3 |
| 起始頁: | 365 |
| 結束頁: | 373 |
| 顯示於類別： | 期刊論文 |
