標題: THE EFFECT OF GATE ELECTRODES USING TUNGSTEN SILICIDES AND OR POLYSILICON ON THE DIELECTRIC CHARACTERISTICS OF VERY THIN OXIDES
作者: CHENG, HC
CHAO, CY
SU, WD
CHANG, SW
LEE, MK
WU, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Mar-1990
URI: http://dx.doi.org/10.1016/0038-1101(90)90202-P
http://hdl.handle.net/11536/4162
ISSN: 0038-1101
DOI: 10.1016/0038-1101(90)90202-P
期刊: SOLID-STATE ELECTRONICS
Volume: 33
Issue: 3
起始頁: 365
結束頁: 373
Appears in Collections:Articles