化學機械研磨微刮傷發生原因與改善方法

Abstract

由於現今積體電路不停地微縮使得積集度不斷地增加，CMP 的微刮傷會造成金屬插銷之間的導通而引發漏電流的問題並影響到良率的表現，這樣的現象在積集度高的記憶體產品中更為嚴重，所以本文的重點會針對如何持續改善 CMP 的微刮傷做進一步地探討。 由於CMP 的製程缺陷種類不單只有微刮傷一種，所以要針對微刮傷進行改善就須要先進行缺陷的分類與編碼，接下來本研究會以缺陷編碼檢測結果為依據進一步地探討現今晶圓廠的 CMP 製程有那些地方是可以有效改善微刮傷的發生，所以會針對不同的主題來討論，包括從原物料與零配件、研磨程式的調整、研磨液供應系統等不同的方向來進行探討；同時也透過實驗的模擬與線上產品的驗證來確認實驗的結果。從實驗的結果可以得知，儘管影響CMP 微刮傷的因素很多，然而我們可以透過不斷地嚐試，進一步有效地改善CMP 的微刮傷。

Base on the improvement of IC manufacturing , more and more transistors and memory cells will be integrated in one chip to gain better profit , however , the micro scratch of CMP will cause short between metal plugs and then suffer product yield. And this situation will be worse and worse at the high integrated product such as DRAM and Flash memory. That is why we will focus on the study of the improvement for the CMP micro scratch. There are several defects induced by CMP process , so we have to classify these defects at the defect inspection system. Then we will study and evaluate what we can do for CMP micro scratch reduction. So we will focus on different topic including raw materials and new parts evaluation for CMP process ,new process recipe and slurry supply system modification. At the same time ,we have some experiment data and the actual product defect result to confirm our result. Although there are different reasons to cause CMP micro scratch , however , we can still improve CMP micro scratch by different ways.