HIGH BREAKDOWN P-CHANNEL INSB MOSFET

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DC Field	Value	Language
dc.contributor.author	TU, SL	en_US
dc.contributor.author	LAN, WH	en_US
dc.contributor.author	CHIOU, TS	en_US
dc.contributor.author	YANG, SJ	en_US
dc.contributor.author	HUANG, KF	en_US
dc.date.accessioned	2014-12-08T15:05:38Z	-
dc.date.available	2014-12-08T15:05:38Z	-
dc.date.issued	1990-03-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.29.L398	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4168	-
dc.language.iso	en_US	en_US
dc.title	HIGH BREAKDOWN P-CHANNEL INSB MOSFET	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.29.L398	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	29	en_US
dc.citation.issue	3	en_US
dc.citation.spage	L398	en_US
dc.citation.epage	L400	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:A1990CW53200006	-
dc.citation.woscount	3	-
Appears in Collections:	Articles

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