二氧化鉿經四氟化碳電漿處理後應用於有機薄膜電晶體之研究

Abstract

電子束蒸鍍系統的優點是可以將製程溫度控制在200℃以下，適合應用於軟性電子製程，但若無經過高溫熱退火，長出的薄膜較鬆散且缺陷多，故用CF4 電漿來處理此薄膜。在這次研究中，採用的介電層是HfO2，我們成功的利用”氟”的修補降低了介電層的漏電。因Hf02 屬於高介電係數(k~24)材料，我們可以提高電容值進而降低臨界電壓，使薄膜電晶體的操作電壓降到~-2伏特。相比於只用爐管通氮氣150℃一小時，CF4 電漿處理的電性較好，而經過CF4電漿處理再加上沉積HMDS 2分鐘的電性比沒有沉積HMDS的好。

The advantage of E-Gun Evaporation System is that we can control the process temperature to be under 200 ℃, and that is suitable for the application of flexible electronic process. The thin films are loose and defective if they are not annealing with high temperature, so usually we use CF4 plasma display panel to process the thin film. In the research, we use HfO2 as the dielectric layer and successfully reduce the electric leakage by using fluorine to mend the dielectric layer. Because HfO is a high dielectric material (k~24), we can advance the capacitor value to level down the threshold voltage and lower the operation voltage of thin-film transistor to -2V. In comparison with processing with furnace and add N2 in it for one hour, the electronic characteristic of thin film through CF4 plasma treatment is better. The electronic characteristic of thin film through CF4 plasma treatment deposits HMDS for 2 minutes is better than not depositing HMDS.