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dc.contributor.authorWu, Chien-Yingen_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorKuo, Chien-Ien_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorChen, Yu-linen_US
dc.date.accessioned2014-12-08T15:01:35Z-
dc.date.available2014-12-08T15:01:35Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-2641-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/419-
dc.description.abstractThe DC and RF performances of 40 nm high electron mobility transistors (HEMTs) with composite channel of InAs channel and In(0.53)Ga(0.47)As sub-channel were demonstrated. The drain current was 870 mA/mm (V(ds)=0.4V, V(gs) OV) and maximum g(m) was 1750 mS/mm (V(ds)=0.5V, V(gs)=-0.65V). The devices showed high current gain cutoff frequency (f(T)) of 420 GHz and low gate delay time of 0.77 ps owing to the nanometer gate length and extremely high electron mobility of the InAs channel. Under low DC power consumption; these InAS HEMTs still exhibited excellent RF and logic performance which indicates these devices have great potential for future high-speed and low-voltage applications.en_US
dc.language.isoen_USen_US
dc.titleEvaluation of RF and Logic Performance for 40 nm InAs/InGaAs Composite Channel HEMTs for high-speed and low-voltage applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalAPMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5en_US
dc.citation.spage2098en_US
dc.citation.epage2101en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000274900901022-
Appears in Collections:Conferences Paper