Evaluation of RF and Logic Performance for 40 nm InAs/InGaAs Composite Channel HEMTs for high-speed and low-voltage applications

Abstract

The DC and RF performances of 40 nm high electron mobility transistors (HEMTs) with composite channel of InAs channel and In(0.53)Ga(0.47)As sub-channel were demonstrated. The drain current was 870 mA/mm (V(ds)=0.4V, V(gs) OV) and maximum g(m) was 1750 mS/mm (V(ds)=0.5V, V(gs)=-0.65V). The devices showed high current gain cutoff frequency (f(T)) of 420 GHz and low gate delay time of 0.77 ps owing to the nanometer gate length and extremely high electron mobility of the InAs channel. Under low DC power consumption; these InAS HEMTs still exhibited excellent RF and logic performance which indicates these devices have great potential for future high-speed and low-voltage applications.