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dc.contributor.author張毓筠en_US
dc.contributor.authorChang, Yu-Yunen_US
dc.contributor.author陳皇銘en_US
dc.date.accessioned2014-12-12T01:28:49Z-
dc.date.available2014-12-12T01:28:49Z-
dc.date.issued2008en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT079615508en_US
dc.identifier.urihttp://hdl.handle.net/11536/42195-
dc.description.abstract光學補償彎曲液晶盒(optically compensated bend ,OCB或稱Pi-cell)以擁有快速反應速度及廣視角而聞名,因此近年來更為許多團體主要的研究對象。然而此模態的液晶盒存在著視角以及必須預先轉態的問題,在許多其他的研究中曾成功的降低轉態的時間,但卻會造成原本光學特性的喪失,例如對比度下降,或需要一個較高的脈衝電壓來完成瞬間的轉態,然而此方法無法用在一般的TFT驅動電路上。 在本論文中,提出一新穎的方法,在導電玻璃表面製作奈米突起,使光學補償彎曲液晶盒在不需高電壓的驅動下加速成核現象,達到快速的轉態,並保留此液晶盒的原本光學特性。zh_TW
dc.description.abstractRecently, the needs for TFT LCD-TVs have dramatically increased by the expansion of the digital-TV market. LCD-TVs have lots of advantages of high resolution, low power consumption, light weight, slim size and so on. However, they have some drawbacks for TV application, especially motion image blur which results from slow response time. Motion image blur is recognized easily for a large screen and 3D LCD-TVs. Optically Compensated Bend (OCB) mode LCD, which has the characteristics of fast response and wide viewing angle becomes a new target to the researchers. Nevertheless, there are some drawbacks of OCB cell, for example, low contrast ratio and pre-transition. Techniques for fast splay to bend transition have received increasingly attention. Although some techniques successfully induced bend transition, most of the techniques sacrificed contrast ratio of the devices or needed a high pulse voltage to form the fast transition. The high voltage (>10V) is not suitable for TFT devices. In this thesis, we present a novel method to form bend transition cores which can spread uniformly in each pixel without applying the high pulse voltage and loosing of optic efficiency.en_US
dc.language.isoen_USen_US
dc.subject奈米粒子zh_TW
dc.subject液晶zh_TW
dc.subjectOCB cellen_US
dc.subjectnano-particleen_US
dc.title表面奈米結構於OCB cells內成核現象之研究zh_TW
dc.titleThe study of surface nanostructure nucleation process inen_US
dc.typeThesisen_US
dc.contributor.department顯示科技研究所zh_TW
顯示於類別:畢業論文


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