應變矽的金屬氧化物半導體場效電晶體

Abstract

在本論文中，我們建構了可以模擬應變矽的金氧半場效電晶體元件的程式，該程式可以自我相容地解一維的Schrödinger和Poisson方程式，利用這個程式，我們研究了一些應變矽元件的量子化特性，特別是元件在彈道傳輸下的效能極限，以及直接穿隧的閘極漏電流。最後，我們提出並檢驗一種利用應變矽的雙閘極元件的架構，以量產的觀點來說，這種元件比傳統的雙閘極元件更具實用價值且有更好的元件特性。

A 1-D self-consistent Schrödinger-Poisson solver for dealing with strained Si MOSFETs has been successfully constructed in this thesis. Several quantum mechanical properties of strained Si devices have also been studied, especially the ballistic performance limit and the gate direct tunneling current. Finally, a strained double gate device has been proposed and examined. This new device might provide a more practical way from the manufacturability point of view while being able to create device performance superior over traditional double gate devices.