完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | WU, CC | en_US |
dc.contributor.author | TSAI, J | en_US |
dc.date.accessioned | 2014-12-08T15:05:45Z | - |
dc.date.available | 2014-12-08T15:05:45Z | - |
dc.date.issued | 1989-10-01 | en_US |
dc.identifier.issn | 0022-2291 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1007/BF00681876 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/4290 | - |
dc.language.iso | en_US | en_US |
dc.title | INFLUENCE OF ENERGY-BANDS ON THE HALL-EFFECT IN DEGENERATE SEMICONDUCTORS | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1007/BF00681876 | en_US |
dc.identifier.journal | JOURNAL OF LOW TEMPERATURE PHYSICS | en_US |
dc.citation.volume | 77 | en_US |
dc.citation.issue | 1-2 | en_US |
dc.citation.spage | 1 | en_US |
dc.citation.epage | 15 | en_US |
dc.contributor.department | 電控工程研究所 | zh_TW |
dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
dc.identifier.wosnumber | WOS:A1989AX08600001 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |