| 標題: | AN EFFICIENT SEMI-EMPIRICAL MODEL OF THE IV CHARACTERISTICS FOR LDD MOSFETS |
| 作者: | CHUNG, SSS LIN, TS CHEN, YG 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公開日期: | 1-Sep-1989 |
| URI: | http://dx.doi.org/10.1109/16.34231 http://hdl.handle.net/11536/4298 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.34231 |
| 期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
| Volume: | 36 |
| Issue: | 9 |
| 起始頁: | 1691 |
| 結束頁: | 1702 |
| Appears in Collections: | Articles |
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- A NEW APPROACH TO DETERMINE THE DRAIN-AND-SOURCE SERIES RESISTANCE OF LDD MOSFETS / CHUNG, SSS;LEE, JS
- A new extraction algorithm for the metallurgical channel length of conventional and LDD MOSFET's / Jean, YS;Wu, CY
- A new approach for characterizing structure-dependent hot-carrier effects in drain-engineered MOSFET's / Chung, SS;Yang, JJ
- A new method for extracting the channel-length reduction and the gate-voltage-dependent series resistance of counter-implanted p-MOSFET's / Wu, CM;Wu, CY
- AN ANALYTIC SATURATION MODEL FOR DRAIN AND SUBSTRATE CURRENTS OF CONVENTIONAL AND LDD MOSFETS / HUANG, GS;WU, CY
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