AN EFFICIENT SEMI-EMPIRICAL MODEL OF THE IV CHARACTERISTICS FOR LDD MOSFETS

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DC 欄位	值	語言
dc.contributor.author	CHUNG, SSS	en_US
dc.contributor.author	LIN, TS	en_US
dc.contributor.author	CHEN, YG	en_US
dc.date.accessioned	2014-12-08T15:05:46Z	-
dc.date.available	2014-12-08T15:05:46Z	-
dc.date.issued	1989-09-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/16.34231	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4298	-
dc.language.iso	en_US	en_US
dc.title	AN EFFICIENT SEMI-EMPIRICAL MODEL OF THE IV CHARACTERISTICS FOR LDD MOSFETS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/16.34231	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	36	en_US
dc.citation.issue	9	en_US
dc.citation.spage	1691	en_US
dc.citation.epage	1702	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1989AL12900021	-
dc.citation.woscount	18	-
顯示於類別：	期刊論文

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