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dc.contributor.authorYARN, KFen_US
dc.contributor.authorWANG, YHen_US
dc.contributor.authorCHANG, CYen_US
dc.date.accessioned2014-12-08T15:05:46Z-
dc.date.available2014-12-08T15:05:46Z-
dc.date.issued1989-09-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/11536/4299-
dc.language.isoen_USen_US
dc.titleGEOMETRY-EFFECTS ON THE GAAS BIPOLAR UNIPOLAR NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTORen_US
dc.typeArticleen_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume32en_US
dc.citation.issue9en_US
dc.citation.spage755en_US
dc.citation.epage760en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1989AL37300008-
dc.citation.woscount4-
顯示於類別:期刊論文