Growth of CdMnS films by pulsed laser evaporation

Abstract

High orientation CdMnS thin films were grown on glass substrate by the pulsed laser evaporation (PLE) technique. Pulsed Nd:Yag laser was used as the evaporation source. During the deposition, various pulsed laser powers, substrate temperatures and different ratios of high purity CdS and MnS powder were used. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive analysis of X-rays (EDAX) were employed to study the crystal structure, surface morphology and the Mn concentration of the as-deposited films. Absorption spectra were used to investigate the band gap of CdMnS films. It was found that the deviation of the band gap of CdMnS films from that of bulk CdS at room temperature depends on the concentration of Mn, The Raman spectra of our samples showed that the mixed mode behavior of transversal (longitudinal) frequency omega(T) (omega(L)) might exist in the CdMnS thin films. (C) 1997 Elsevier Science S.A.