1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorWU, JSen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorLEE, CPen_US
dc.contributor.authorWANG, YHen_US
dc.contributor.authorKAI, Fen_US
dc.date.accessioned2014-12-08T15:05:48Z-
dc.date.available2014-12-08T15:05:48Z-
dc.date.issued1989-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.29659en_US
dc.identifier.urihttp://hdl.handle.net/11536/4336-
dc.language.isoen_USen_US
dc.titleORIGIN OF THE ENHANCEMENT OF NEGATIVE DIFFERENTIAL RESISTANCE AT LOW-TEMPERATURES IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURESen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.29659en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume10en_US
dc.citation.issue7en_US
dc.citation.spage301en_US
dc.citation.epage303en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1989AD91400006-
dc.citation.woscount11-
Appears in Collections:Articles


Files in This Item:

  1. A1989AD91400006.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...