ORIGIN OF THE ENHANCEMENT OF NEGATIVE DIFFERENTIAL RESISTANCE AT LOW-TEMPERATURES IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WU, JS	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	LEE, CP	en_US
dc.contributor.author	WANG, YH	en_US
dc.contributor.author	KAI, F	en_US
dc.date.accessioned	2014-12-08T15:05:48Z	-
dc.date.available	2014-12-08T15:05:48Z	-
dc.date.issued	1989-07-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.29659	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4336	-
dc.language.iso	en_US	en_US
dc.title	ORIGIN OF THE ENHANCEMENT OF NEGATIVE DIFFERENTIAL RESISTANCE AT LOW-TEMPERATURES IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.29659	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	10	en_US
dc.citation.issue	7	en_US
dc.citation.spage	301	en_US
dc.citation.epage	303	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1989AD91400006	-
dc.citation.woscount	11	-
顯示於類別：	期刊論文

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