A NEW TWIN-WELL CMOS PROCESS USING NITRIDIZED-OXIDE-LOCOS (NOLOCOS) ISOLATION TECHNOLOGY

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DC Field	Value	Language
dc.contributor.author	TSAI, HH	en_US
dc.contributor.author	YU, CL	en_US
dc.contributor.author	WU, CY	en_US
dc.date.accessioned	2014-12-08T15:05:48Z	-
dc.date.available	2014-12-08T15:05:48Z	-
dc.date.issued	1989-07-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4339	-
dc.language.iso	en_US	en_US
dc.title	A NEW TWIN-WELL CMOS PROCESS USING NITRIDIZED-OXIDE-LOCOS (NOLOCOS) ISOLATION TECHNOLOGY	en_US
dc.type	Article	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	10	en_US
dc.citation.issue	7	en_US
dc.citation.spage	307	en_US
dc.citation.epage	309	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1989AD91400008	-
dc.citation.woscount	5	-
Appears in Collections:	Articles

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