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dc.contributor.authorLIU, WCen_US
dc.contributor.authorHSU, WCen_US
dc.contributor.authorLOUR, WSen_US
dc.contributor.authorWANG, RLen_US
dc.contributor.authorCHANG, CYen_US
dc.date.accessioned2014-12-08T15:05:49Z-
dc.date.available2014-12-08T15:05:49Z-
dc.date.issued1989-06-01en_US
dc.identifier.issnen_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.28.L904en_US
dc.identifier.urihttp://hdl.handle.net/11536/4354-
dc.language.isoen_USen_US
dc.titleMBE GROWN UNDOPED SUPERLATTICE GATE AND MODULATION-DOPED BUFFER STRUCTURE FOR POWER FET APPLICATIONSen_US
dc.typeLetteren_US
dc.identifier.doi10.1143/JJAP.28.L904en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume28en_US
dc.citation.issue6en_US
dc.citation.spageL904en_US
dc.citation.epageL906en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1989AD72800005-
dc.citation.woscount2-
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