標題: A GaAs/AlAs wet selective etch process for the gate recess of GaAs power metal-semiconductor field-effect transistors
作者: Chang, EY
Lai, YL
Lee, YS
Chen, SH
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-一月-2001
摘要: A highly selective wet chemical etch process for gate recess of the GaAs power metal-semiconductor field effect transistors (MES FETs) was developed. The power MESFETs used in this study were epitaxially grown devices with a 20 Angstrom A1As etch-stop layer for gate recess. The selective etch process using citric acid/potassium citrate/hydrogen peroxide solution was studied. A selectivity better than 3800:1 was achieved for GaAs/A1As layers. This selective etch was applied both to high-power, high-voltage power MESFETs and low-voltage large-periphery power MESFETs. For high-power applications, the 14.7 mm device had a breakdown voltage of 22 V. When tested at 1.88 GHz with a drain bias of 10 V, it provided a maximum output power of 38.8 dBm and a maximum power-added efficiency of 52.5%. For low-voltage applications, the 19.8 mm device was tested under IS-95 code-division multiple access (CDMA) modulation at 1.88 GHz with a drain bias of 3.5 V. Under CDMA modulation, the device showed an output power of 28.03 dBm with an adjacent channel power rejection of -29.6 dBc at 1.25 MHz offset frequency. Both devices also showed excellent uniformity in pinch-off voltages. (C) 2000 The Electrochemical Society. S0013-4651 (00)03-053-6. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1344555
http://hdl.handle.net/11536/29978
ISSN: 0013-4651
DOI: 10.1149/1.1344555
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 148
Issue: 1
起始頁: G4
結束頁: G9
顯示於類別:期刊論文


文件中的檔案:

  1. 000166129600049.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。