標題: | A GaAs/AlAs wet selective etch process for the gate recess of GaAs power metal-semiconductor field-effect transistors |
作者: | Chang, EY Lai, YL Lee, YS Chen, SH 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 1-一月-2001 |
摘要: | A highly selective wet chemical etch process for gate recess of the GaAs power metal-semiconductor field effect transistors (MES FETs) was developed. The power MESFETs used in this study were epitaxially grown devices with a 20 Angstrom A1As etch-stop layer for gate recess. The selective etch process using citric acid/potassium citrate/hydrogen peroxide solution was studied. A selectivity better than 3800:1 was achieved for GaAs/A1As layers. This selective etch was applied both to high-power, high-voltage power MESFETs and low-voltage large-periphery power MESFETs. For high-power applications, the 14.7 mm device had a breakdown voltage of 22 V. When tested at 1.88 GHz with a drain bias of 10 V, it provided a maximum output power of 38.8 dBm and a maximum power-added efficiency of 52.5%. For low-voltage applications, the 19.8 mm device was tested under IS-95 code-division multiple access (CDMA) modulation at 1.88 GHz with a drain bias of 3.5 V. Under CDMA modulation, the device showed an output power of 28.03 dBm with an adjacent channel power rejection of -29.6 dBc at 1.25 MHz offset frequency. Both devices also showed excellent uniformity in pinch-off voltages. (C) 2000 The Electrochemical Society. S0013-4651 (00)03-053-6. All rights reserved. |
URI: | http://dx.doi.org/10.1149/1.1344555 http://hdl.handle.net/11536/29978 |
ISSN: | 0013-4651 |
DOI: | 10.1149/1.1344555 |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 148 |
Issue: | 1 |
起始頁: | G4 |
結束頁: | G9 |
顯示於類別: | 期刊論文 |