標題: | Highly selective etch process for the manufacture of GaAs power MESFET's |
作者: | Chang, EY Lai, YL Lee, YS 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 1999 |
摘要: | In this paper, a highly selective etch process for the manufacture of GaAs power metal-semiconductor field-effect transistor (MESFET's) has been developed. The selective etch process using citric acid/potassium citrate/hydrogen peroxide solutions were studied. The experimental results were utilized to the gate recess process of the GaAs MESFET's for advanced wireless communication applications. When operating at a drain bias of 10 V and a frequency of 1.88 GHz, the 14.7-mm-wide MESFET's provided a maximum output power (Pout) of 38.8 dBm with a power-added efficiency (PAE) of 49.5% and a gain of 8.42 dB. The linear gain was 12.2 dB and the Pout at l-dB compression was 37.7 dBm with a PAE of 50.7%. The maximum PAE was 52.5%. |
URI: | http://hdl.handle.net/11536/19389 |
ISBN: | 1-56677-226-5 |
期刊: | PROCEEDINGS OF THE STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXX) |
Volume: | 99 |
Issue: | 4 |
起始頁: | 40 |
結束頁: | 46 |
顯示於類別: | 會議論文 |