MBE GROWN UNDOPED SUPERLATTICE GATE AND MODULATION-DOPED BUFFER STRUCTURE FOR POWER FET APPLICATIONS

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LIU, WC	en_US
dc.contributor.author	HSU, WC	en_US
dc.contributor.author	LOUR, WS	en_US
dc.contributor.author	WANG, RL	en_US
dc.contributor.author	CHANG, CY	en_US
dc.date.accessioned	2014-12-08T15:05:49Z	-
dc.date.available	2014-12-08T15:05:49Z	-
dc.date.issued	1989-06-01	en_US
dc.identifier.issn		en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.28.L904	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4354	-
dc.language.iso	en_US	en_US
dc.title	MBE GROWN UNDOPED SUPERLATTICE GATE AND MODULATION-DOPED BUFFER STRUCTURE FOR POWER FET APPLICATIONS	en_US
dc.type	Letter	en_US
dc.identifier.doi	10.1143/JJAP.28.L904	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	28	en_US
dc.citation.issue	6	en_US
dc.citation.spage	L904	en_US
dc.citation.epage	L906	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1989AD72800005	-
dc.citation.woscount	2	-
顯示於類別：	期刊論文

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