A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOS

Full metadata record

DC Field	Value	Language
dc.contributor.author	TSUI, BY	en_US
dc.contributor.author	CHEN, MC	en_US
dc.date.accessioned	2014-12-08T15:05:50Z	-
dc.date.available	2014-12-08T15:05:50Z	-
dc.date.issued	1989-05-01	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4371	-
dc.language.iso	en_US	en_US
dc.title	A NOVEL PROCESS FOR HIGH-PERFORMANCE SCHOTTKY-BARRIER PMOS	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	136	en_US
dc.citation.issue	5	en_US
dc.citation.spage	1456	en_US
dc.citation.epage	1459	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1989U606500041	-
dc.citation.woscount	5	-
Appears in Collections:	Articles

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